Journal of Materials Chemistry C _ Front Cover

21 April 2024, Issue 15,

Page 5259 to 5640

Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics

Do Hyeong Kim, Seyoung Oh, Ojun Kwon, Soo-Hong Jeong, Hyun Young Seo, Eunjeong Cho, 

Min Jeong Kim, Wondeok Seo, Jung-Dae Kwon, Yonghun Kim, Woojin Park and Byungjin Cho

https://pubs.rsc.org/en/journals/journalissues/tc#!issueid=tc012015&type=current&issnprint=2050-7526

Image created by Younghee Lee / CUBE3D Graphic.